Reference No.: QM 2022/14

In the Institute IFOX at HZB, we work on functional oxide thin-films and nanostructures combined with semiconductors for nanoelectronics and neuromorphic applications. We focus on material synthesis, detailed structural characterization using advanced methods, transport and optical properties in different types of materials and devices and finally on their integration on CMOS chips. We closely collaborate with various research institutes and universities in Berlin, Europe, and the USA.
As a postdoctoral researcher in our team, you will be working in the framework of the EU project BeFerroSynaptic ( Compact and efficient neuromorphic circuits containing neurons and synapses implemented with hybrid CMOS / ferroelectric Hf(Zr)O2-based synaptic devices are being developed in BeFerrroSynaptic.
You will work on the BEOL integration of Hf(Zr)O2-based field-effect transistors (FeFETs) on the CMOS chips and on their electrical characterization after integration.
You will be involved in collaborations with several partners, including NamLab, IBM Zürich, ETH Zürich and the University of Groningen, and you will benefit from a dynamic and state-of-the-art-equipped environment at HZB combined with the outstanding research environment of Berlin.

Your Tasks

  • You are responsible for the nanofabrication in clean room of ferroelectric FETs as stand-alone devices on Si substrate.
  • You perform post-processing in clean room on CMOS chips for the integration of ferroelectric FETs at BEOL (CMOS chips are diced from foundry engineering wafer runs).
  • You are in charge of the electrical characterization of integrated FeFETs (including on-chip hybrid test circuits) and the interaction with circuit design groups in the project.
  • You mentor master’s and/or PhD students.
  • You present at international conferences and scientific publications of experimental results.

Your Profile

  • Completed PhD in physics or electrical engineering
  • Mandatory experience (minimum 1 year) in nanofabrication in clean room
  • Extended experience in device characterization
  • Experience in the field of oxide materials is a plus
  • Excellent written and spoken skills in English

Your Benefits at HZB

  • Work in one of the largest non-university research institutions in Berlin
  • Work in the research environment of the science metropolis Berlin
  • The opportunity to contribute together with researchers from all around the world to the development of renewable energies, energy stores and next-gen technologies for a climate-friendly future
  • Technology development at the highest level with new equipment and a variety of very well-equipped laboratories
  • Work/life balance
  • Flexible work hours with flexitime
  • 39-hour week
  • 30 days paid leave
  • Comprehensive counselling services for family and career
  • Health management and company sports programmes
  • Financial support for public transport (Jobticket)
  • Continuing education opportunities
  • A company pension scheme (VBL)
  • And a team that looks forward to meeting you!

Fixed term contract for 12 months. The salary is based on the Collective Agreement for the German Public Service (TVöD-Bund).

How to apply

The following documents must be provided for your application:

  • Letter of application – Please explain how you meet the requirements
  • Curriculum Vitae
  • List of publications
  • Copies of diploma and grades with English translation
  • 2 letters of reference

We look forward to receiving your application via our application management system by 14.08.2022. For reasons of data protection regulations, we are unfortunately unable to consider applications that reach us by email or by mail in the application process.

We strive to increase the proportion of female employees and are therefore particularly pleased to receive applications from women. Disabled applicants with equal aptitude are given preference.For German version, please click on the following link: German Version.


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